algorithms policy

Utility of NISQ devices: optimizing experimental parameters for the fabrication of Au atomic junction using gate-based quantum computers

Curator's Take

This article demonstrates a fascinating application of NISQ quantum computers to real-world materials science, specifically optimizing the complex parameter space needed to fabricate gold atomic junctions through feedback-controlled electromigration. What makes this particularly noteworthy is the direct performance comparison showing that gate-based NISQ devices outperformed D-Wave's quantum annealing approach for this optimization problem, achieving lower residual energies and better solution quality for large-scale parameter optimization. This work exemplifies how current quantum computers, despite their limitations, can already provide practical advantages in specialized optimization tasks that are computationally intensive for classical methods. The research points toward a promising near-term application where quantum advantage could emerge in materials fabrication and nanoscale device engineering, areas critical for advancing quantum hardware itself.

— Mark Eatherly

Summary

Feedback-controlled electromigration (FCE) enables precise regulation of atomic migration by carefully optimizing multiple experimental parameters. However, manually fine-tuning these parameters poses significant challenges. This study investigated the feasibility of autonomously fabricating Au atomic junctions through gate-based quantum computing using a noisy intermediate-scale quantum (NISQ) device, which effectively approximates solutions to combinatorial optimization problems. We compared the computational accuracy of the NISQ device against a previously reported D-Wave quantum annealer. The results indicate that the NISQ device achieved lower residual energies and produced higher-quality approximate solutions for large-scale problems than the quantum annealing system.